CSD16327Q3: PSpice Model package (REV.B) issue when attaching on candence virtuoso

Hua Chen

Part Number: CSD16327Q3
Other Parts Discussed in Thread: TINA-TI, CSD13303W1015, CSD16301Q2

Tool/software:

Hello,

I downloaded this PSpice model file and inserted into cadence PSPICE file tab and click. The simulation can run through(without generate error), but this MOSFET does not turn on when i give it 5V or 8V ideal PWM signal.

My question are: (1) will the PSPICE model work on cadence spice simulation? (am i missing some additional setup? (2) what simulation environment(like tools) does this PSPICE model file designed for? (LTSPICE or other? ) please advise!

thanks,

Harris

7 months ago

+1 John Wallace1 7 months ago

TI__Mastermind 38330 points

Hello Hua,

Thanks for your interest in TI FETs. All of our FET models have been verified with PSpice from Cadence. The models are unencrypted and can be used with various simulation tools such as PSpice, PSpice for TI, LTSpice and TINA-TI. PSpice for TI and TINA-TI are both available on TI.com at the links below. I attached a short document with instructions on how to use PSpice models with Cadence. Please review and let me know if this resolves your problem.

https://www.ti.com/tool/PSPICE-FOR-TI?keyMatch=pspice%20for%20ti%20download&tisearch=universal_search

https://www.ti.com/tool/TINA-TI?keyMatch=tina&tisearch=universal_search

RUNNING_PSPICE_MODELS_IN_CADENCE.pdf

Best Regards,

John Wallace

TI FET Applications

0 John Wallace1 7 months ago in reply to John Wallace1

TI__Mastermind 38330 points

Hi Hua,

Following up to see if your issue has been resolved. Please let me know.

Thanks,

John

0 Hua Chen 7 months ago in reply to John Wallace1

Prodigy 120 points

Hi, John,

The Pspice cadence PDF helps. However, I found when designing Buck and boost converter with this power FETs model, the switching nodes become quite ringing. (even after tuning the parameters). Does the FETs just tend to be more ringing at higher frequency? Do you have the TI standard buck/boost converter design manual? Or are there other less ringing TI FETs?

Thanks,

Harris

0 John Wallace1 7 months ago in reply to Hua Chen

TI__Mastermind 38330 points

Hi Harris,

TI NexFET devices tend to have more ringing than some other vendors. This is due to the fast switching speed. There are several methods to reduce switch node ringing as detailed in the application note at the link below. The most common methods are using a series gate resistor to slow down the FET, adding a small resistor in series with the bootstrap capacitor and the use of a R-C snubber from switch node to GND. The second link below is to an application note that includes links to all of TI's web based FET technical information. Please let me know if I can be of any further assistance.

https://www.ti.com/lit/pdf/slpa010

https://www.ti.com/lit/an/slvafg3f/slvafg3f.pdf?ts=1739462411967#page=1&zoom=auto,-133,798

Thanks,

John

0 Hua Chen 7 months ago in reply to John Wallace1

Prodigy 120 points

Hi John,

I'm looking for a TI power fets which has low Ron* Coss (the performance can beat GaN fets at LOW VOLTAGE). ususally, 3.3V VDS power switch or 5V VDS power switch. I cannot really find any from a lot of vendor. what is the closest you can get from TI? thank you!

0 John Wallace1 7 months ago in reply to Hua Chen

TI__Mastermind 38330 points

Hi Harris,

Do you have a target for the figure of merit Ron * Coss? Alternatively, do you have a particular GaN FET part number that you can share? This will help narrow down potential silicon FETs from TI.

Thanks,

John

0 Hua Chen 7 months ago in reply to John Wallace1

Prodigy 120 points

sorry, rough answer is as low as possible. Can you look into EPC2040, it’s a 15VDS power GaN FET, I believe for and 3.3V or 5V VDS, the silicon ron*Voss should be lower(better). I’m searching for that, if you found something please guide me. Thanks

0 John Wallace1 7 months ago in reply to Hua Chen

TI__Mastermind 38330 points

Hi Harris,

I started with the EPC2040 and found a 25V FET, CSD16301Q2 with around the same on resistance. However, Coss of this FET is much higher than the GaN device. Coss for a silicon FET is non-linear and it maxes out lower values of VDS and is higher at 3.3V and 5V. I looked at a 12V FET, CSD13303W1015 and Coss is even higher. I don't think we have anything close to the GaN in terms of Ron * Coss figure of merit.

Thanks,

John

0 Hua Chen 7 months ago in reply to John Wallace1

Prodigy 120 points

yeah, I also look into other vendors as well. it's hard to find ultra low Ron*Coss or Ron*Cg commercial available power FETs. is there a reason? no much profit to sell those?

0 John Wallace1 7 months ago in reply to Hua Chen

TI__Mastermind 38330 points

Hi Harris,

Yes,in general GaN offers a better figure of merit than silicon FETs. That is the reason that there is a lot of work and new product development in GaN which is a relatively new technology. Not to say that silicon is done but I think the physics and structure of silicon FETs limits the performance.

Thanks,

John

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CSD16327Q3: PSpice Model package (REV.B) issue when attaching on candence virtuoso