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LM5175-Q1: Please let me know the requirements for the necessary specifications.

hideyuki takahashi
Prodigy 70 points
Part Number: LM5175-Q1
Other Parts Discussed in Thread: LM5175EVM

Tool/software:

Hello Dear All.

I would like to create our circuit with reference to LM5175EVM,
However, I don't know how to select D1 and D2 of LM5175EVM, because they are not listed in the datasheet.
Please let me know the requirements for the necessary specifications.

  • 0
    TI__Guru 58641 points

    Hi Hideyuki,

    this diodes are used reduce the voltage drop on the MOSFET in the transition phase when the current is flowing through the backgate diode.

    In case this loss and drop is to high this diode can help to reduce but also can help to reduce ringing on the switch node - beside the snubber.

    To select this diodes following items should be considered

    1. Maximum voltage: The diode must be able to withstand the maximum peak voltage across it, which is typically equal to or slightly greater than the maximum DC link voltage in this configuration.

    2. Current rating: Ensure that the diode can handle the surge current caused by switching events without exceeding its maximum rated current. This value should be higher than the maximum pulse current through any switch or inductor during switching transitions and fault conditions.

    3. Average current: Typically not so criticial as only short current pulses are flowing through the dioide.

    4. Recovery time: In Buck-Boost applications, diode recovery time is crucial for preventing overvoltages due to inductive kickback during switching transitions. Choose a diode with fast reverse recovery (trr).

    Best regards,

     Stefan