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CSD13380F3: What is the maximum frequency signal I can operate this FET ?

Atharva Upadhye
Prodigy 20 points
Part Number: CSD13380F3


Tool/software:

I am trying to find a N channel MOSFET which I can use in series with data lines of USB2.0 DP/DN. 

Basically I need to physical disconnect DP/DN between host and device when there is no VBUS.

Can any one tell if CSD13380F3 is suitable for 500Mbps speed ?

  • 0
    TI__Mastermind 39510 points

    Hello Atharva,

    Thanks for your interest in TI FETs. The CSD13380F3 is optimized for load switch and general switching applications. It has not been tested switching at high frequencies and therefore we have no data. It is a low gate charge FET but the typical internal gate resistance is 16Ω which limits how fast it can switch. Even our FETs optimized for high frequency switch-mode power applications are limited to a few MHz switching frequency. I do not believe we have any discrete FETs that will switch at that high of a frequency. TI has a number of USB ICs that might be able to do the job. I can reassign this thread to the USB apps team to see if they can assist you.

    Best Regards,

    John Wallace

    TI FET Applications

  • 0 in reply to John Wallace1
    Prodigy 20 points

    Hello John,

    I think i did not present my application correctly.

    I am not looking for Gate switching at 500MHz. I am going to keep the Gate on in saturation. Then i want to send 500MHz signal through FET on the other side. I need physical disconnection between two sides of FET (drain and source) when there is no Gate voltage. 

    I am ensuring VGS remains always in saturation. I need to make sure i can transfer high speed data on the other side

    Thanks

  • 0 in reply to Atharva Upadhye
    TI__Mastermind 39510 points

    Hi Altharva,

    Thanks for the clarification. Since the FET isn't required to switch at 500MHz, this will probably work. Keep in mind that the gate must be driven higher than the maximum drain voltage by at least 1.8V. This is the minimum value of VGS where Rds(on) is specified in the datasheet. I would recommend simulating your circuit implementation to determine the fidelity of the signal thru the FET. Please let me know if I can be of any further assistance.

    Thanks,

    John