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Selection of the Gate Drive IC for SiC MOSFETs

Han Wang
Prodigy 20 points
Part Number: UCC21738-Q1
Other Parts Discussed in Thread: UCC21710-Q1, UCC21717-Q1, UCC21755-Q1, UCC21737-Q1, UCC21732-Q1, UCC21756-Q1, UCC21750

Tool/software:

Dear TI support, 

I’m currently designing a Dual Active Bridge (DAB) converter, and I’m looking for a suitable isolated gate driver IC. The SiC MOSFETs I'll use are 1200V SiC MOSFETs with a Total Gate Charge (Qg) of 288nC and the switching frequency will be 100kHz. I’m considering using the UCC21738-Q1 as my gate driver. Based on its high peak source/sink current, built-in protection features (DESAT, soft turn-off, AMC, etc.), and high CMTI, it looks like a good candidate. Before finalizing the design, I would like to ask:

1. Do you think UCC21738-Q1 is a suitable choice for driving such SiC MOSFETs in a DAB converter topology?

2. On the website, I also see several similar products, such as: UCC21717-Q1, UCC21756-Q1, UCC21755-Q1, UCC21732-Q1, UCC21750, UCC21710-Q1, UCC21737-Q1, etc. Could you help clarify the main differences between these gate drivers? My priority is to ensure robust protection, sufficient drive capability for fast switching, and reliable operation under high dV/dt conditions. 

I'm looking forward to your reply and thank you in advance! 

Best regards,

Han

  • 0
    TI__Expert 8095 points

    Hi Han,

    All the UCC217xx-Q1 family have same capability in-terms of isolation voltage, CMTI rating and VDD-VEE voltage range to drive SiC Mosfets effectively. It will fulfill the switching frequency and gate charge requirement as well.

    The variation mainly depends up on DESAT vs OC, CLMPI vs CLMPE and also ASC vs AIN-APWM.

    We have the following link which explains the difference across different variants. 

    Comparison of all UCC217xx Devices

    Hope it helps to choose the right device for your end application.

    Thanks

    Sasi