Tool/software:
Dear TI Team,
my questions are regarding the Desat function of the UCC5880-Q1 gate driver. I want to use 2 of it to drive 2x SIC MOSFETs (Halfbridge) at max. 435V DC Link Voltage.
1- is it possible for DESAT function to detect and save the driver and the SIC MOSFET in a short-circuit current as a result of shoot-through event. i.e. the high side SIC is having a short (defect) and the low side is turning on?
2- the datasheet states that the response time to DESAT event is 110ns but I cannot find info about anyother Desat timings. Is there a blanking time? where can I find more info about that?
Thank you
Best Regards
Raeed
