UCC21520: SiC without negative gate pulse

AJIT JAIN

Part Number: UCC21520

Tool/software:

We are planning to use TI's gate driver UCC21520 with IMDQ65R007M2HXUMA1 SiC MOSFET in a PSFB topology for primary side. We are checking the possibility of driving using bootstrap driver or using pulse transformer.

Can we drive SiC without negative gate pulse?- We want to drive using bootstrap driver circuit.
Any suggestions about driving SiC MOSFET using pulse transformer in gate driver circuit
below circuit using pulse transformer of 1:2 turns ratio, where V1 will come from non-isolated gate driver IC. Any disadvantage of using below circuit ?

Regards,

Ajit

5 months ago

0 Hiroki Honda 5 months ago

TI__Expert 8686 points

Hi Ajit,

The biggest advantages I see in using an isolated gate driver are the isolation ratings that the device is specified under through various testing and the cost/size reduction. There are some important considerations such as the duty cycle limitation of using a gate drive transformer.

Here is a helpful application note about gate drive transformers:

Link: https://www.ti.com/lit/an/slla602/slla602.pdf?ts=1744230508142&ref_url=https%253A%252F%252Fwww.google.com%252F

AJIT JAIN said:
Can we drive SiC without negative gate pulse?- We want to drive using bootstrap driver circuit.

This is possible as long as careful consideration is made of the surrounding circuit and layout. As long as the guidelines in the UCC21520 product datasheet is followed as well as the Application Guide: Dual-Channel Schematic and Layout Design Guidelines, there should not be issues.

Link to application guide on product page: https://www.ti.com/product/UCC21520#design-tools-simulation

Regards,

Hiroki

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UCC21520: SiC without negative gate pulse