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[FAQ] LMG1210: Helpful Resources for Designing, Assembling, and Troubleshooting GaN Gate Drive Circuits.

Part Number: LMG1210
Other Parts Discussed in Thread: LMG1020, LMG1025-Q1, , LM5113-Q1, LMG1205

Tool/software:

When compared to traditional MOSFET gate drive designs, a gate drive circuit using GaNFETs controlled by a dedicated GaN gate driver presents many unique circuit and layout design considerations. The resources linked below will help address common questions and issues

Schematic and Layout Design:

Application Brief on general GaN driver schematic and layout recommendations for half bridge and low side circuits:

https://www.ti.com/lit/ab/sluaam3/sluaam3.pdf

A Reference Design for a LiDAR nanosecond laser driver using LMG1020. This reference document covers capacitor types, FET selection, output overshoot, and other design considerations for both LiDAR and general low side GaN driver applications:

https://www.ti.com/lit/ug/tidue52/tidue52.pdf

An in-depth Application Report on optimizing GaN gate driver layout for LiDAR applications. This report comprehensively covers guidelines for laser control and PCB layout for LMG1020 and LMG1025-Q1 devices:

https://www.ti.com/lit/an/slla456/slla456.pdf

An in-depth Application Report on optimizing GaN gate driver layout for RF power amplifier applications. This report comprehensively covers guidelines for designing a RF power amplifier using LMG1210 that takes advantage of GaNFET’s high switching performance to improve efficiency with envelope tracking:

https://www.ti.com/lit/an/snoaa44/snoaa44.pdf

FAQ on how to add a parallel external bootstrap diode to a GaN driver with an internal boot diode such as LM5113-Q1. This may be necessary in applications where switching frequencies are very high and a bootstrap capacitor with large capacitance is used:

https://e2e.ti.com/support/power-management-group/power-management/f/power-management-forum/1158615/faq-can-i-connect-an-external-bootstrap-diode-in-parallel-with-the-internal-diode

Troubleshooting:

Application Brief overview on the structural advantages of GaN power switch technology and key driving parameters.

https://www.ti.com/lit/ab/sluaam0/sluaam0.pdf

Application Note on causes and solutions for negative HS voltage and bootstrap capacitor overcharge which can be destructive to both the driver and transistors in GaN half-bridge Circuits:

https://www.ti.com/lit/an/snvaa94/snvaa94.pdf

Application Report on how to use the LMG1210 GaN Driver’s dead time control to optimize converter efficiency. The report discusses third quadrant losses, propagation delay variation effects, and optimal dead time:

https://www.ti.com/lit/an/snva815a/snva815a.pdf

Application Report on how to calculate the power losses in a half bridge circuit using the LMG1205 GaN half bridge driver:

https://www.tij.co.jp/jp/lit/an/snva723a/snva723a.pdf

Assembly:

WCSP package PCB and surface mount assembly guide:

https://www.ti.com/lit/an/snva009ai/snva009ai.pdf

Guide for the proper handling of sensitive WCSP package devices:

https://www.ti.com/lit/ml/sszqnf6/sszqnf6.pdf