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LP38852: Heat Loss of LP38852MRX-ADJ/NOPB

Part Number: LP38852


Tool/software:

Hi all,

In order to increase the output voltage of this device, my customer decided to remove the voltage drop diode (Di) on the input side.

We tested temperature rise evaluation (contact type) with and without Di.

However, the calculated value showed that the LDO increased by 40°C when Di was removed, while the test result showed that it only increased by around 1.5°C.

The temperature was not so hot to touch.

Please let us know the manufacturer's opinion on the difference between the calculated value and the measured value.

2 Di was not enough for the drop voltage required by the LDO, so we changed to 1 Di.

Forward current (If): 0.9 [A]
Di voltage drop (Vdi): 0.5 [V]
Iout=If
Before → after Di deletion (Vdo) =0.1→0.5 [V]

Best Regards,

Ryusuke

  • Hello Ryusuke,

    Can you please share the calculation that resulted in a 40°C increment?

    What is the regulator's package? {KTW (DDPAK/TO-263), NDZ (TO-220)  or DDA (SO PowerPAD)}

    Regards,

    Daniel

  • Hi Daniel,

    Thank you for your reply. I will confirm the calculation to the customer.

    Their package is DDA. PN is LP38852MRX-ADJ/NOPB.

    Best Regards,

    Ryusuke

  • Hello Ryusuke,

    Thank you for sharing the package type.

    Does the customer have the ability to capture a thermal image of the device mounted in the PCB? 

    Was the 1.5C increase observed at the top of the device?

    Keep in mind that the junction to case (top) thermal impedance is 54.6°C/W, which is greater than the junction to case (bottom) at 4.3 °C/W, so it is expected to have more heat dissipated thru the thermal pad at the bottom of the device into the PCB. This would result in lower temperature observed at the top of the device.

    Regards,

    Daniel

  • Hi Daniel,

    I sent the measurement method and calculation formula below.

    I would appreciate any comments.

    [Test Method]
    A point type thermometer is used for the "(contact type) temperature rise comparison test". It is attached to the IC surface with tape.
    Device: LP38852MRX-ADJ/NOPB
    ⓪ Current consumption: 0.9 A
    ① Ambient temperature outside the enclosure
    Di:25.4°C
    Di removal: 25.0°C
    ② Ambient temperature of LP38852 on the substrate
    Di:31.3°C
    Di after removal: 31.9°C
    ③ Surface temperature of LP38852
    Di:40.0°C
    Di after removal: 42.1°C
    ④ Temperature including Di (3) - (2): 8.7°C
    ⑤ Temperature when Di is removed (3)-(2): 10.2°C
    ⑤ The difference between -(4) is 1.5°C

    Calculation formula:
    θja: Calculation is difficult because copper foil has solid GND.
    Calculated using 10 mm*0.25 mm of the surface as the minimum range. (0.4*0.1inch) =0.04
    FAN with minimum air flow of 0.69m3/min is attached at both ends, and considerable air flows. Based on the data sheet, it is considered that θja =98°C/W (saturation value).

    Relationship between total consumption current and θja:
    Vdo:500mV
    Pd(pass)=(2.5-0.5-1.5)*0.9=0.45 W
    Pd(bias)=(5.3*0.003)= 0.0159 W
    Pd(in)=(1.5*0.007)= 0.0105 W
    Pd=0.45+0.0159+0.0105= 0.4764 W

    ΔTj=125-(45+15) =65°C * Assuming ambient temperature on the substrate is +15°C
    Θja<ΔTj/Pd=65/0.4764=136.4°C/W

    Evaluation result of consumption current: 0.9 A
    θja adopts 98°C/W: 0.4764 W*98°C/W=46.6872°C temperature rise
    Tjmax-45°C - 46.6872°C=+33.3128°C

    Determine the environmental temperature tolerance X from θja <ΔTj/Pd
    98°C/W< (125°C - 45°C - X)/0.4764 W
    98<(125-45-33.3128)/0.4764
    98<98, and the environmental temperature tolerance is +33.3128°C.

    The temperature rise is considered to be about 46°C.
    The difference of Vdo is 100 mV⇒500 mV in the actual machine evaluation result.
    The difference of IC temperature rise is +1.5°C.

    Best Regards,

    Ryusuke

  • Hello Ryusuke,

    Thank you for providing the detailed analysis. Please allow an additional business day while I perform the analysis on the provided data.

    Regards,

    Daniel

  • Hello Ryusuke,

    The calculated temperature rise is missing several factors that affect the thermal dissipation capability of the device and the PCB. The assumption that  θja =98°C/W (saturation value) seems rather high as the Rθja for the DDA package is 48.4°C/W (consult table 6.4 in the datasheet: https://www.ti.com/lit/ds/symlink/lp38852.pdf ). Looking at the temperature difference between the top case and the "Ambient temperature on the substrate" is not sufficient as factors such as convection, air movement, PCB design, etc do affect how heat is dissipated. In still-air JEDEC-defined RθJA measurements, almost 70%–95% of the power generated by the chip is dissipated from the test board, not from the surfaces of the package. For a more comprehensive and detailed analysis of thermal metrics, I suggest the following application note: https://www.ti.com/lit/an/spra953d/spra953d.pdf?ts=1752510651967

    Best regards,

    Daniel