Tool/software:
Hello,
I've read in a different thread that using this part to power all 6 transistor gates in a BLDC driver is not recommended if the power for the high-side FETs is level-adjusted using a bootstrap diode+capacitor.
Unfortunately no reason was given why this is not recommended, other than using dedicated DCDC-converters is "much simpler".
However it also takes up a lot more board space and the part cost is also quite a bit more than the diode+capacitor solution.
Could somebody please give reasons why this is not recommended for this part and what problems one would run into using this part with a bootstrap circuit for the high-side FETs?
I guess one downside would be that the part can only be used in single output configuration (VDD-VEE)?