Other Parts Discussed in Thread: UCC23525, UCC5350, UCC21330, UCC21550
Tool/software:
Hello TI team,
I’m currently using CoolMOS MOSFETs (e.g., IPW60R041P6) in a single-phase, 230 V RMS inverter design. These devices have a high gate charge (~250nC), and I’m exploring gate driver options.
I've been looking at the UCC21750, which is primarily marketed for SiC and IGBT applications with up to ±10 A drive strength.
-
My understanding is that CoolMOS devices do not require DESAT protection and typically don’t need a negative gate bias.
-
However, UCC21750 offers features like active Miller clamp, reinforced isolation, and isolated analog sensing, which seem beneficial.
My key questions are:
-
Can UCC21750 safely and effectively drive CoolMOS
MOSFETs without using DESAT protection or negative bias?
-
Are there any functional limitations or design caveats (e.g., reliability, switching performance, gate overshoot)?
-
Would TI recommend using the driver in this application, or are there specific caveats or recommended settings (e.g., UVLO, Miller clamp usage)?
Looking for real-world guidance or similar use cases, if available—thanks in advance!