Tool/software:
Hi Team,
While measuring the Gate Driver output on TPSI31XXEVM, it was observed that it is taking ~57us to reach 0V from 17V.
Please refer the attached waveform. Yellow signal is measured at TP10 (VGATE) & Red is measured at TP7 (VDRV).
Could you please check if the value is correct?
If yes, it will slow down the process to turn-off the MOSFET and, in event of short-circuit the MOSFET will be damaged before it is turned off.
I also attempted to verify the tHL_VDRV parameter. According to the datasheet, the VDRV voltage should typically drop from 17V to 1.7V (10% of 17V) within 2.5 µs. However, during testing, I observed that after the EN signal was pulled low, VDRV took 11.64 µs to transition from 17V to 1.7V. Interestingly, the voltage dropped from 17V to 2.9V in 2.27 µs, which is fairly consistent with the datasheet specification.
This aligns with my earlier observation that VDRV drops to around 3V fairly quickly, but then takes significantly longer to reach 0V.
Please refer to the attached images for reference:
EN = Blue signal
VDRV = Yellow signal
Note: The EN signal is generated using a function generator, which is why its amplitude appears doubled on the oscilloscope.
