LM5122: new design requirement

Part Number: LM5122

Tool/software:

Hi Team,

For the Vout design requirement, we will change to 1. If vin = 12V~51V then Vout is 52V/200W,

2.if vin = 52V~56V, then Vout can passthrough directly to 52V~56V/200W.

Based on this new requirement, would you suggest that we keep use LM5122 (original design) or other better solution?

Please kindly advise, thank you!

Key requirements

  • VIN: 12–56 V DC
  • VOUT:
  1. If vin = 12V ~ 51V, then Vout will be boosted to 52V/200W.
  2. If vin = 52V ~ 56V, then Vout can passthrough directly to 52V ~ 56V/200W.
  • POUT (max): 200 W
  • Goals: lower total solution cost vs. current TI solution; high efficiency and reasonable thermal performance; stable control across full VIN range
  • Nice to have readily available evaluation board / reference design, guidance on FET/inductor selection, and indicative pricing & lead time

    Thank you for your help~

  • Hi Tommy,

    Thanks for using the e2e forum.
    LM5122 has a bypass mode feature, meaning if VIN goes above target VOUT, it will activate the high side MOSFET in 100% mode to minimize losses.
    There is no device change necessary and LM5122 should already be the best recommended part for this application.

     For 200W, they are also at the threshold where they need to decide for single phase or multi phase implementation.
    A reference for a single phase design can be found here (135W):
    https://www.ti.com/tool/PMP9431
    A dual phase reference can be found here (260W):
    https://www.ti.com/tool/PMP7979

    Please let me know if there are any additional questions.

    Best regards,
    Niklas