Hi team,
In the below thread, the statement that “fast charge-up switches to a 150 µA internal current source when PG_FP reaches 93% of the intended Vout value” is a typo.
My understanding is that this means the switch threshold is determined by the Rfb resistor divider.
I would like to know if it is possible to set this threshold to 1.0 V when Vout is set to 1.0 V.
And if we set this condition, is it possible to reduce the t2 time in Figure 8-13 to almost 0 seconds?
According to the datasheet, this divider sets the current limit and the PG assert threshold (see Section 8.1.5 “Power-Good Feedback (FB_PG Pin) and Power-Good Threshold (PG Pin)” and Section 8.1.6 “Adjusting the Factory-Programmed Current Limit”).
From my understanding, this seems difficult for reasons related to these sections.
Please share your opinion.
And in this device EVM, this resister divider is two 10kohm resisters.
This value is different from the value in Table 8-1 in datasheet.
What is the design intent?
Best regards,
teritama
Best regards,
teritama
 
				 
		 
        		 
					 
                          