Dear Sir/Madam,
I am working on BQ77910A for the application of 10 cell Li-Ion protection.
I am doing test on this EVM and I have a question or two to ask.
If I want to avoid the wake-up resistor then what can I do for the schematic design.
And also during the Under Voltage test when the cells went under the UV condition the Dsg FET turned off,its ok, but i could not observe the recovery even after increasing the voltages to above hysterisys. Load was connected at the output and after that dsg voltage did not recovered before I used wake-up resistor again. so can you Please suggest me a design in which wake-up resistor can be avoided as it wont be feasible in practicle circuits.
If possible provide a schematic different from the EVM as I am already working on that circuit ,provide me a circuit in which the there is no need of wake-up resistor.
Thank You.