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Modulation index of communication signal for reliable operation

Other Parts Discussed in Thread: BQ500210, BQ51013A, BQ51050B

Hi,

I am using BQ51013A as the RX solution and bq500210 as the TX solution. I am trying to understand the communication part better so as to make my charging platform more robust in presence of stray fields. I have a few questions regarding the same,

1. Could you please specify the acceptable modulation index of the communication signal (as seen at COMM+ pin in the TX chip) to ensure a reliable analog ping and power transfer phase.

2. COM1 and COM2 capacitors ( at RX side) affect the modulation index, what is the maximum value of these capacitor that can be used?

Thanks,

Sean

  • The depth of modulation can be increased to improve reliability of communications.

    Com1 and Com2 capacitors are typical 22nF but we have tested and operated with up to 68nF.

  • Hello Bill,

    the description of the communication caps in the datasheet of the bq51050B are confusing me a little bit. on page 17 it says something like each of the caps is 47nF and when the comm-FETs are closed there is effectifely a 22nF capacitance added to the coil. But in the schematic two 22nF caps are used for the load modulation. Could you please give me a little explanation?

    Kind Regards

    Manuel