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Using FET for LM5116

Tsuguhiko Asai
Expert 1260 points
Other Parts Discussed in Thread: LM5116

Dear All,

We were questioned how to use LM5116 by a customer.
The customer wishes that they use the following FET for High-Side and Low-Side of LM5116.


FET：TPN1600ANH
http://www.semicon.toshiba.co.jp/info/docget.jsp?type=datasheet&lang=en&pid=TPN1600ANH

We want to do simulation using this FET for LM5116, using Webench.
However, I cannot simulate it because this FET cannot select in Webench.
Will you add this FET to a choice candidate of the FET?

In addition, the specifications of this FET are Ciss=1230pF.
And the Typ specifications level prescribed with LO terminal and HO terminal of LM5116 is timing specifications at the age of 1,000pF.
Therefore I think that troubles such as the outbreak of the penetration electric current are possible when I put LM5116 and TPN1600ANH together.
Is our recognition right?

Tsuguhiko Asai

  • 0
    TI__Expert 6365 points

    Hello Tsuguhiko-San,

    Adding the TPN1600ANH FET into the WEBENCH database is a none issue; however, the FET model will be used is a generic one unless we get the specific FET model from Toshiba.   Even then, I don't know if the simulation will show if the Ciss can be the cause of the issue. 

    We do have a Pspice model for the LM5116, I would suggest downloading the Pspice model from the LM5116 product folder and change the test bench to run your test case to see if it can duplicate the issue you are seeing.