TPS92075 gate drive capability

i)From the gate drive section of the datasheet: Gate drive resistance = 8Ohms max.

ii)FYI:  Peak current capability would be based on Vcc/Gate drive resistance. If Vcc = ~12V / ~8Ohm max = ~1.5Amps peak. (In case you are used to gate drivers being quoted this way)

iii)Max charge depends on power dissipation of the package and frequency of operation. If you assume ~100kHz. Then from Pgate = Vgate * Qgate * f we can find the max gate charge.

iv) For the SOIC THETAjA = 112'C/W . So if we choose a conservative 25 degree C rise we can disipate 223mW.

v) We assume a Vcc of ~12V then:  Qgate= Pgate/(Vgate * f):  0.223/(12 * 100k) = 185nC

vi) One FET used on a TPS92075 EVM was the FDD6N25. It has a Qg of 6nC max and this FET would handle most LED drive applicaitons up to ~25W easily.  So we can see from this that unless you are doing something extremely high in power (>300W maybe), or wish to run at a very high frequency, you can probably use pretty much what ever FET you wish.

Thanks for posting your interesting question.