my customer is using this device in multible sockets as a kind of or-ing function. In his application the TPS22965 could be powered off with a high impedance load in Vin/Vbias (connected together).
Due to the or-ing architecture Vout will see in his case 1.5 Volt and with the body diode of the FET he is seeing a backbias voltage of 0.8 Volt at Vin/Vbias. I have received now the following questions:
* could this 1.5 Volt at Vout damage the device ?
* why is the low side FET not acive in this case? ( I guess this is due to a too low Vbias)
* could it happen that already the 0.8 Volt or a slightly higher voltage @ Vin/Vbias could activate the low side FET and therefore an oscillation could occure?
Thanks in advance