I am using Tina Ti to simulate my full bridge design using 2xLMG5200, one for each half bridge.
To simulate dead time I am using a circuit that I have always used in the past. with the resistor being at 1.41k the capacitor value in pF determines the dead time in nS. So in the circuit below a dead time of 28nS is being applied.
So my question is how accurately is the power dissipation in the model simulated? I ask this because with a regular MOSFET design I can get all the way down to 6.8nS dead-time without any problems but when I do 6.8nS using the LMG5200 my power dissipation in the modules is enormous. With 28ns I get around 5W of dissipation but with 6.8nS I am getting >50W dissipation. My switching frequency is varying from 1.3Mhz to 500kHz. RMS current into the load is 3.5A
Here is my dead time circuit: