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CSD19536KTT replacement for PSMN4R8-100BSE in TI Hot Swap reference designs

Other Parts Discussed in Thread: LM5066, TPS24740, LM25056A, CSD19536KTT, CSD19535KTT

I am looking to find a total TI solution for LM5066 48V hotswap.
24-48Vin >>>>EMI FILTER>>>> LM5056/LM5066 >>>>> BRICK >>>> LM25056A each brick output >>>> TPS24740 oring


LM5066 Reference material suggests the PSMN4R8-100BSE from NXP

However TI now has 100V fets like the CSD19536KTT.
This appears to have the same SOA safe operating area and a lower Rdson.

Would the CSD19536KTT be a better replacement for the NXP fet?

  • Ed,
    Absolutely! The CSD19536KTT was designed specifically to go after the 48Vin Hot Swap / ORing market and compete with devices like the NXP FET you mentioned. It is much lower Rdson, and can handle higher package currents than the NXP FET. We have been working on getting on some ref designs with TI controllers now that these devices are RTM.

    We have also done some comp analysis in the presentation I will email you directly, which shows measured SOA data from NXP and other competitors. We did not compare to the NXP you mentioned above, as I assumed (incorrectly it would seem) that the FET with the lowest Rdson would have the biggest SOA. Next time we do some testing, we will get the other NXP FET and test that SOA as well.

    Each point in this data represents a single FET tested to failure. There is some part to part variation, but this ensured that we were getting a true apples to apples comparison. Different competitors haven't different rules for derating in their datasheets - TI generally derates 30 - 40% - so only looking at the datasheet can be misleading.

    We have also just released the CSD19535KTT which is not quite as good as the CSD19536KTT in terms of resistance and SOA, but also not quite as expensive. Please feel free to reach out and contact me directly if you need any more support on this part.