In my design, BAT_OK drives the gate of an NMOS (FDN327 power n-mosfet) that switches the ground of my load. (Positive side of the load (a motor) is connected to BAT via a current limiting resistor.)
Does that net need a pulldown resistor to ground to extract stray capacitance from the fet gate when the BQ is trying to coldstart? (I have it breadboarded with a pulldown, and will try it without the pulldown, but my measuring instruments are crude and I would like an informed opinion so there are no surprises later.)
Also, the data sheet says use a PFET. Does that mean a power FET or a p-channel FET? If it means p-channel, why? (I'm not an EE.) I saw a schematic for another answer, where BAT_OK drives an NFET driving a PFET, without a pulldown. I suppose you need a PFET to switch the positive side of a load, but can use just an NFET to switch the ground?
(My older question about the same design. I'm finally committing the design to a PCB. e2e.ti.com/.../210094 )
