Hi there!
In figure19 of datasheet, there is a diode D1 between BTST and REGN pins. this shematic uses BAT54C.
Why a Schottky diode is required? and how should we choose the forward current(If) rating of this diode?
Thanks!
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Hi Steven,
About the diode, besides of the fast Trr, I am not sure how its Forward Current rating is chosen. the EVM uses D1 : ZLLS350, whose datasheet provides 380mA If parameter while your EVM manual says D1 "1.16A, 40-V" in page 8(BOM page). there seem to be inconsistency on this component.
About the cap, I will use higher rating. but in datasheet page30(Table 5) uses C6 0.1uF/16V. this seems to be incorrect.
Thanks!
Yi,
You should follow the EVM user guide, which is what our EVM uses. We evaluate our EVMs to make sure they work as we expect, so if you follow those guidelines, then you are good. Use similar diode to the user guide (ZLLS350). This diode will not continuously conduct like a regular diode, only each cycle to charge up the bootstrap.
As for the bootstrap cap (C16), the user guide uses 50V rating, and I suggest you use that rating as well to leave enough margin.
Thanks,
Steven
Steven,
I re-consider about the boostrap cap rating and look into some IR application note on NMOS high-side drive. the voltage seen by this cap is just REGN-diode (about 6V) rather than VIN + ~6.
Please see attachment page5 "3. HOW TO SELECT THE BOOTSTRAP COMPONENTS".