Dear support Member,
I think that MOSFET Power Loss Calculator tool is useful function.
I have request and question.
【Request】
Useful function
・Input voltage range setting.
・Power Loss M1 is breakdown.
・Power Loss M2 is breakdown.
(ex:Switching loss、Conduction loss )
Display useful
・M1 Highside FET is Qgd value.
・M2 Lowside FET is Qrr value.
【Question】
・Is Rds consider including temperature characteristic?
・Is FET parasitic inductance（Lg, Ls, Ld) consider include?
Best regard.
Bob Lee.
Bob,
I am very excited to here you find this tool useful. A lot of people put in a lot of effort to get this tool on the web. Your feedback is very much appreciated.
I will relay your feedback to the team responsible for this tool. I have a couple ideas of how we can do something like what you are saying in the next rev, and I will let you know what the team agrees to.
In the meantime, to answer your questions, for this revision, junction temperature is assumed to be Tj = 125deg. This assumption was made because we really can't predict what the delta Tj would be without knowing the thermal environment of the designers board, so a sort of worst case scenario was assumed. Therefore, all resistances and other parameters are input at their values at 125deg junction temperature.
Parasitic source inductances are absolutely included (particularly those described in this app note here: 
).
We did not include other inductances like Lg or Ld because they were not determined to have as big an impact on the overall loss. However, we absolutely wanted to include Ls and that is why you will notice the power block devices offer superior performance, particularly at higher frequencies.
Again, thank you very much for your feedback on this tool and I will let you know when the team gets back to me regarding your input.
