• State
  • Locked Locked
  • Replies 1 reply
  • Subscribers 63 subscribers
  • Views 547 views
  • Users 0 members are here
Support feedback
Options
Options
Related

This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

BQ24296M: BQ24296M EOS issue

Yun Gong
Prodigy 40 points
Part Number: BQ24296M

 

Production：Smart phone

Platform：MT6750

Ti part number: BQ24296MRGER

Question: From Ti FA report, BQ24296M has be damaged by EOS. They want to know the reason and how to solve.

Description：

   Customer has shipment 130K and feedback 2pcs which called A, B for EOS issue. They do cross experiments:

  1. Replace A with new material and test 400V surge, charge IC is ok, TVS be damaged. At this time, the Vbus=14.88V(meet spec). From the experiment we can get as the surge increases TVS is the first failure. Please refer the waveform as bellow

    Channel1=Vbus

    Figure1

  2. Replace B with new material and test 400V surge, charge IC is ok, TVS be damaged. Refer to finger 2 （CH1 VBUS，CH2 SW，CH4 PMID）Vbus and PMID voltage both meet spec and SW voltage over spec。

                                   Figure 2

  3. Refer figure3, How to define the voltage spec between Vbus PMID and SW? Why Vsw limit voltage is small than Vbus/VPMID?

                                 Figure3

     

    4) Customer Design Schematic

    Figure4