BQ76930EVM: External MOSFETs requirements for passive balancing

Theo Franquet

Part Number: BQ76930EVM
Other Parts Discussed in Thread: CSD25310Q2

Hi,

Regarding the MOSFETs used for external passive balancing on the BQ76930 EVM, do device specs (namely for the FDY1002PZ - Dual P-Channel) support low cell voltages of around 1.1V (corresponding to near discharge state), can the MOSFETs be driven in this voltage range?

The objective is to use this hardware on non Li-Ion based cells.

Thanks very much.

over 8 years ago

0 Vish Nadarajah over 8 years ago

TI__Expert 6085 points

Hi Theo,

The p channel FETs on the EVM are CSD25310Q2 ad TI's NexFET technology. Please refer to the FET characteristic. Vgs vs Rds-on curve will have the details.

txs

vish

0 Theo Franquet over 8 years ago in reply to Vish Nadarajah

Prodigy 80 points

Thanks very much again. So can I confirm with you that the User Manual's Schematic is not up to date (Fig. 27, p.45)(snippet attached) and that the EVM uses single CSD25310Q2 p-channel FETs instead of the indicated Dual FDY1002PZs.

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BQ76930EVM: External MOSFETs requirements for passive balancing