• State Resolved
  • Locked Locked
  • Replies 1 reply
  • Subscribers 63 subscribers
  • Views 423 views
  • Users 0 members are here
Support feedback
Options
Options
Related

This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

LDO TLV70030's PMOS Rds(on)

Red Yen
Expert 4360 points

Icc_no_load_follower_max = 2.0 uA    @ Vin < Vout_reg

When VIN < Vout more than 175mV (typ) device will dropout voltage, so the power consumption is Rds(on)*2uA is it right?

someone could tell  Rds(on) value?

 

  • 0
    TI__Guru**** 150830 points

    I am not sure what the first line of your post means or where 2 uA is coming from.

    The power loss in an LDO is always equal to (Vin-Vout) * Iout + Vin * Iq.  This last term (Vin * Iq) is usually negligible and is negligible for this LDO.  In dropout, the power loss is still (Vin - Vout) * Iout, where Vin - Vout = the dropout.

    The Rdson can be determined from Ohms law (V=IR).  The 175 mV dropout spec is at a current of 200 mA.  So, R = 0.875