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LM5116: Using GaN switches

Part Number: LM5116
Other Parts Discussed in Thread: LMG1205, LM5114, LMG5200

Hello, I have a working design using standard Si mosfets. Is there any reason why I cannot take the same working design and replace the Si mosfets with GaN switches?

Thank you for your time!

David

  • HI,

    I have routed your question to the GaN group.

    Thanks
    -Arief
  • Great! I look forward to their recommendations!
  • Hi David,

    thanks for the interest.

    In general it is always possible to convert a design from Silicon to GaN, as long as you identify a FET with similar BV and Rdson.

    Typically this will result in capability to operate at higher frequencies and improve efficiency.

    The two main things to pay attention to when switching a design from silicon to GaN is that :

    1. enhancement mode GaN  has a much lower voltage limit on the gate, 5-6V in most cases is maximum with very little capability for over-voltage

    2. eGaN HEMTs don't have a body diode, instead they bias on at about 2V, therefore minimizing dead-time to a few nanoseconds becomes important.

    We have developed drivers that have been optimized to work with GaN, to allow for seamless transition.

    Among our offerings are:

    1. LMG1205 (100V Half-bridge driver)

    2. LM5114 (low-side driver)

    3. LMG5200 (80V half-bridge module - driver and FETs)

    4. LMG3410 (600V GaN FET with driver included)

    To find out more please go to our product page.

    Please let us know if you have any other questions!

    Best regards,

    Alberto