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TPS54527: About EOS.

watanabe
Expert 1740 points
Part Number: TPS54527

Hi,

I have a question.


Due to static electricity to SW,
Is the mechanism by which the LSD - FET breaks and the Gnd and the SW become short - circuiting is appropriate?

Best regards,

Watanabe

  • 0
    TI__Expert 4875 points
    HI Watanabe,

    I am not sure you are asking about the ESD(Electrostatic discharge) protection or the overvoltage spike on FET. If the device is not working and electrostatic discharge like human body static voltage is applied on device pins, if it is not over the ESD specs listed in the datasheet, the ESD cell within device will protect the device and there is no internal damage. If the static voltage is higher than the specs, the internal ESD cell or the internal FET could be damaged and you will find SW short to GND. If the device is working and there is overvotage spike on SW switching node, the low side FET could be damaged and SW will short to GND .

    Best,
    Anthony