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BQ24630: low side MOSFET and BQ24630 is easy to be damaged when the battery plugging

Part Number: BQ24630

Hi team,

Now customer is using BQ24630  for 6s 19.2V Lithium iron phosphate battery.

When the battery is plugged in, the board is not powered by any other supply, it is found BQ24630 and low side MOS are very easy to be damaged.

For MOSFET, the drain and source are short. 

For BQ24630, P22,P18,P10,P24 are found to short to GND.

The circuit is almost same with our EVM board, I could send to you by email.

From the waveforms, the transient voltage when plug in, the peak value is about 30V at battery connection point, almost same at PH node, no ringing is observed.

The waveforms show the peak value 30V will be reached at about 7~8us at PH node.

It seems there is possibility that low side MOS could be turned on due to high dv/dt, which makes the PH is short to GND and damage the MOS.

But I still have no enough time to get the waveform for this, just assumption.

Do you have any suggestion? Schematic and PCB are all available, I could send by email. Any other information is needed, please let me know.

Great thanks.