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UCC27210: Excessive ringing problem in half bridge configuration

Part Number: UCC27210
Other Parts Discussed in Thread: CSD19534KCS

Dear Sir,

 

I am using the UCC27210 to drive 2 power mosfet in the typical half bridge configuration  as reported in the data sheet. The power mosfets that I am using are CSD19534KCS. The HS pin is used to drive a transformer ZS1052 connected directly  to ground to realize a voltage amplification and to drive a piezoelectric transducer with a frequency of 54 kHz. I am having a lot of problem due to  half bridge ringing . The oscillation is so large  that when the voltage applied to the high side mosfet drain (the High voltage) is larger than only 20 V the oscillations kills such mosfet, probably because the voltage in the HS pin  becomes too  negative. In my PCB layout I have not a gate resistance to reduce the rise time of the gate voltage  and probably this amplifies the problem. I am trying several solution to fix it, as for example un RC snubber network between that drain and source of the low side mosfet or a fast  diode between  HS pin  and ground  to suppress the negative voltage in the HS pin but nothing seems work. Do you have any suggestion?  I am using a 100 nF bootstrap capacitor

 

Best regards

Luca Belsito  

  • Hi Luca,

    Thanks for reaching out! I am an apps engineer working with UCC27210. Looks like a nice little circuit you got there. Can I ask you what application is the transducer for?

    You mention HS ringing with higher highside drain voltages. Which fet is damaged HS or LS? Thats a great observation and could very well be exceeding the maximum HS mosfet Vgs or LS mosfet Vds caused by the switchnode ringing. A concurrent scopeshot of HS-GND and HO-HS would be helpful proving this. This ringing might make sense because as you increase the energy stored in the parasitic inductance and capacitance on the switch node, and when you turn on the HS fet after the freewheeling effect from the LS body diode load current (which charges the parasitic drain inductance of the LS fet) you are changing the polarity of LS drain and HS source parasitic inductance and discharging it into the switchnode the same time that the LS parasitic capacitance becomes charged from VIN. That charging and discharging on the same node creates a LC filter type ringing on the switchnode. You can read into more detail about this here: www.ti.com/.../slyt465.pdf

    For a solution to this your best bet is to slow down the rise time the HS fet with a small gate resistor value. You can also put a cap in parallel with Cgs of the HS fet to create the same affect. If possible I would like to see a schematic of how your connecting the driver-fets-transformer piezo circuit.

    Thanks,
  • Dear Jeff,

    Many thanks for replying me fast and helping me. The fet that is always damaged in my application is the HS (already three times during my tests) . I have to limit the maximum voltage applies to the half bridge to work in safety condition. Looking at the voltage referred to gnd in the HS switching node this is clearly less than -20 V ( larger in absolute value) when the fet fails. The ringing amplitude is more o less similar during the rise time and fall time and its maximum amplitude is almost 100% of the applied voltage before dumping in few us.  The application is a standard driver circuit for a ultrasound piezoelectric transducer where high voltages are required to generate significant acoustic wave. Even if, in this application, where a transformer is used to amply the voltage on the secondary window, the control signal frequency is quite low (below 1 MHz), I have designed the circuit with fast driver and fast power fets because I would like to use the same structure also for high frequency applications (with high frequency transducers), obviously without using the transformer part that cannot be used for high frequency voltage signals. Below you can see the circuit . The primary window of the coil is connected between HS and GND or HS and the middle of two capacitors (if a positive/negative waveform is needed in the application). At the moment I am using the circuit with the primary connected to gnd. If I add a capacitance in parallel between GS in the HS fet I will reduce the rise time but also the fall time, maybe I have to add the same capacitance also in the low side to avoid a current path to ground during the switching phase.   Many thanks.

    Luca 

  • Hi Luca,

    Glad to help you, Thanks for sharing your driver system info with me! The 4A output of the driver is a bit just too much for this circuit. Having the primary directly connected to ground..Im thinking the LF application allows a larger voltage to appear on the secondary with still being able to reset the core where in the other HF application the ‘middle of the two capacitors’ are used where a negative is needed for reset...?

    Its possible to use a gate resistor for turn on only by anti-paralleling a diode on the gate resistor to quickly ground the gate of the fet, the turn off will be unaffected.

    In the same way reverse recovery current of the LS body diode creates ringing on switch node, shoot through appears in a similar way. If you have the MCU creating a fixed deadtime then the deadtime will become a concern when you increase the added GS cap and your SW ringing gets worse as a larger inductance appears on the source of the LS fet lifting up GND. Optimization of this deadtime takes time while being done empirically should also be done with current limiting. Worst case numbers should be implemented at temperature. The highside deadtime should be calculated after successful soft switching of the lowside due to freewheeling effect since a large part of the conduction loss is due to the LS body diode.

    Thanks,