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LM5050-1-Q1: Unregulated Vds of the MOSFET

Part Number: LM5050-1-Q1
Other Parts Discussed in Thread: LM5050-1

We are working with the LM5050-1 without using the regulation of the Drain-Source - Voltage of the MOSFET, to reduce conduction losses.

This is done by a voltage divider circuit at the OUT - input, which gives the 60mV datasheet threshold (see max. Vgs - value at the full temperature range on page 6), independant of the actual working condition. This works and the chip gives the full gate voltage without regulation.

But when I look at the datasheet an page 5, the the maximum gate voltage is defined at a Voltage Vout = Vin - 175mV.

When I understand it right, and it works like that, the gate voltage is max., if the 60mV is reached.

Where are the 175mV are coming from? I didn't found any hint in the datasheet.

Do I have to change the resistor divider to hav the 175mV to meet worst-case calculations?

  • Hello,

    Vsd regulation threshold max across temperature for LM5050-1-Q0 is 60mV and Q1 is 37mV at Vin12V and 5V. And this is not expected to vary across Vin too much.

    To get rid of regulation with a voltage divider, it has to be greater than 60mV for Q0 and 37mV for Q1.

    The Maximum gate voltage of 175mV is datasheet page 5 is having a lot of margin to be sure that Vgate-Vin is measured correctly. It wouldn't change much with 70mV or 80mV of Vsd.

    Yes, Gate voltage reaches max when the controller is unable to regulate Vsd and this happends at high loads.

    It is not required to change the resistor divider to 175mV, however need to include margin for resistor tolerance.

    Regards,
    Kari.
  • Hello Kari,

    thank you for the answer. My question is fully answered.

    Regards,

    Rainer