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CSD23382F4: CSD23382F4 Gate-Source Leakage at 4.5V

Errol Leon6
Expert 5850 points
Part Number: CSD23382F4

Hello,

My customer would like to know what the Maximum Gate-to-Source leakage for the CSD23382F4 at 4.5V so they can account for it in there design.  Do we have any characterization data/value on this? 

Best regards,

Errol Leon

Texas Instrument

Field Application Engineer  

  • 0
    TI__Mastermind 18200 points

    Errol,

    Thank you for posting. Unfortunately, this is not something that we have characterized and not something we test in production. 

    As such, all we can advise is that it will be less than the value at -8Vgs (-10uA) that is provided in the datasheet. 

  • 0 in reply to Brett Barr1
    Prodigy 120 points
    Can the leakage at 4.5V be guaranteed-by-design to be less than a s certain threshold?

    Other vendors have similar FETs that also have 10uA leakage at 8V, but they also characterize the leakage at lower voltages which is useful for our application where the PFET is ON in standby.
  • 0 in reply to Gerald
    TI__Mastermind 18200 points
    Unfortunately, we do not have any data for this specific part under -8Vgs.

    And predicting what the leakage would be at any point under 8V would be difficult, because for this technology type, leakage increases exponentially with Vgs.

    So if you wanted to be conservative, you could multiply the 8V leakage by a linear factor (10uA * 4.5/8 = 5.6uA) and you could confidently say the part's actual Igss would be well under this because of the concavity of an exponential curve.

    But I don't know how to get a more precise estimate than this without actually measuring the part, and we are not going to be making changes to the test program for this part to include another value.