Hi,
My customers have some question on UCC25630 on 800V application:
They need add transform isolation between HS and MOS mid-point, is this feasible, any issue on this approach?
Could add external MOS driver to increase driving current ability during HV application?
In addition to above question, and:
What's the constant frequency during burst mode?
For 100Hz line frequency ripple, UCC25630 should have advantage on the Io ripple suppression? customer's target is 100Hz Io ripple<2%.
Thanks!