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Capacitive isolation

albert chao
Prodigy 70 points

TI use capacitive isolation method for isolation gate drive IC

is there any study about EMI issue caused by the capacitor between high side and low side?

  • 0
    TI__Genius 13445 points
    HI Albert,

    Thanks for reaching out to us, my name is Mamadou Diallo and I will help address your concern.

    To my knowledge, we have not encountered any EMI issues related to the capacitor isolating high and low side. Both channels are isolated in order to ensure functional operation of both separated channels in the system.
    Do have specific concerns with regards to your application/system?

    I will investigate if there has been any study done on this and I will get back to you as soon as possible (before Friday).

    Thanks for your patience.

    Regards,

    -Mamadou
  • 0 in reply to Mamadou Diallo
    TI__Genius 13445 points

    Hi Albert,

    I have not found any specific study done with regards to any potential EMI between high and low side channels.

    Depending on your system/application needs, consider taking a look at UCC21225A a dual-channel isolated gate driver, which uses a functional isolation barrier between high and low side and allowing working  working voltage up to 700-VDC between the 2 secondary sides drivers meeting industry safety certifications.

    This functional isolation barrier is based through a series of circuits etched in silicon. Its center is a silicon dioxide-fabricated capacitor allowing to block direct current flow by leveraging an edge-based detection scheme. 

    The link below discusses some of the tests/studies done on our isolation technology. 

    www.ti.com/.../slyy081.pdf

    Please let us know if you need further assistance or press the green button if this helped addressed your concern.

    Thanks.

    Regards,

    -Mamadou