Hi TI Experts,
My customer received a PCN stating the change on wefer process of LBC7.
TI change total PO thickness from 24kA to 39kA by increasing the 2nd Oxide Teos thickness from 3kA to 18kA on the LBC7 process node.
Customer which to know what this actually mean? Can TI provide more details on this? Any effect of the IC?
Please advice,
Thanks,
Br,
Teach Me