Hope this email finds you well.
Wanted to request to know if you maintains reliability data for the discrete mosfets CSD18536KTT ?
By reliability data I mean data which includes aging effect due BTI (bias temperature instability), thermal etc..
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Hope this email finds you well.
Wanted to request to know if you maintains reliability data for the discrete mosfets CSD18536KTT ?
By reliability data I mean data which includes aging effect due BTI (bias temperature instability), thermal etc..
Thanks for the reply John, let me detail a bit. So suppose the FET is used for 10 years to what will be the change in its current at the end of 10yrs. It is likely that its threshold voltage will increase causing the current to decrease. Similarly there will be change in KP etc… so will be great if this quantification is available. I am aware that this is done for the integrated / on-chip mosfets which are nm devices but not sure for discrete parts.
Thanks for the reply John,
"Our qualification testing is the aging process" - so there might be silicon data like threshold voltage degradation with time or similar any other parameter degradation with time. Is that available anywhere ?