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UCC27611: Technology

Daniel Cruz43
Prodigy 70 points
Part Number: UCC27611

In order to evaluate the use of this device (UCC27611) in a new constelation satellite, we have to chek the radiation behaviour. Since different events can affect to de device depending on thecnology. As far as I know, this part is manufactured with GaN technology. We know that 

GaN is a wideband gap material and compared to silicon, the drain to source distance can be a factor of ten smaller which translates to a much smaller RDS(on). While silicon FETs are very close to their theoretical limit of channel length, GaN has much more room for improvement. GaN's advantages to the power supply designers include size, weight and efficiency.

 This technology is sensitive to TID (low dose rate), SEB and SET.

In other hand, GaN devices are traditionally packaged as a discrete device and driven with a separate driver, because GaN devices and drivers are based on different process technologies and may come from different manufacturers. 

Summarizing, my question is: Which Radiation events (TID, SEB, SET, SEGR, SEL....) have to be into account in this device (UCC27611)? Any recommendation?

Thank you so much for your quick reply.

Daniel Cruz

  • 0
    TI__Genius 12990 points
    Hi Daniel,

    Thanks for reaching out to us about this, Im an apps engineer with all the GaN drivers and hope to help out.

    Its true that GaN technology can handle more radiation compared to silicon. However UCC27611 is not made with GaN technology, its made WITH silicon fets but its made FOR GaN FETs. If you require a rad hard gate driver check out our space or HiRel drivers which feature a BJT/MOSFET output stage, which combined are non-latching.

    The silicon output stage of the driver contains a parasitic BJT that can latch up but if the output stage is made purely of silicon transistors. Latch up presents itself when radiation triggers a ground leakage current that can develop enough voltage drop across its body to turn on the parasitic NPN. A latch up can also occur when too high dv/dt creates the same parasitic voltage drop however UCC27611 employs a strong sink current to combat miller turn on. Check out this research study I found on it (etd.ohiolink.edu/!etd.send_file

    does this help clear up gate driver radiation issues? if you have any more Qs please let me know!
    Thanks,
  • 0 in reply to Jeffrey Mueller
    Prodigy 70 points
    Jeff,
    So, from the radition point of view, we can consider this device UC27611 is manufactured with CMOS technology, truth? Or BiCMOS?

    Thank you for your quick reply,
    Dani
  • 0 in reply to Daniel Cruz43
    TI__Expert 4420 points
    Hi Daniel, I am the space power systems engineer in High Reliability. The UC27611 is a commercially rated device and as a result, it has not been tested for radiation performance. I general, we do not disclose details about the technology of our devices but yes, I can tell you that for this particular case, it is a BiCMOS process and as a result, it could be sensitive to HDR as well as LDR. In HiREL, we are working on supporting GaN applications with a Si based GaN driver that will be space rated. Can you share a bit more details about what application you are looking to support?

    Thanks,

    JV
  • 0 in reply to Javier Valle
    Prodigy 70 points
    Thanks! This information is very useful for us.
    Have a great day!
    Dani