In order to evaluate the use of this device (UCC27611) in a new constelation satellite, we have to chek the radiation behaviour. Since different events can affect to de device depending on thecnology. As far as I know, this part is manufactured with GaN technology. We know that
GaN is a wideband gap material and compared to silicon, the drain to source distance can be a factor of ten smaller which translates to a much smaller RDS(on). While silicon FETs are very close to their theoretical limit of channel length, GaN has much more room for improvement. GaN's advantages to the power supply designers include size, weight and efficiency.
This technology is sensitive to TID (low dose rate), SEB and SET.
In other hand, GaN devices are traditionally packaged as a discrete device and driven with a separate driver, because GaN devices and drivers are based on different process technologies and may come from different manufacturers.
Summarizing, my question is: Which Radiation events (TID, SEB, SET, SEGR, SEL....) have to be into account in this device (UCC27611)? Any recommendation?
Thank you so much for your quick reply.
Daniel Cruz