Hi,
There are two different circuits design between EVM-002(GaN) and EVM-021(SiC). One is R22 & R28 adn other one is R9 & C10. Which EVM design is right? Or its design by type of mosfet?
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Hi,
There are two different circuits design between EVM-002(GaN) and EVM-021(SiC). One is R22 & R28 adn other one is R9 & C10. Which EVM design is right? Or its design by type of mosfet?
Hello Che,
Both the EVM designs are correct.
1. The change in the placement of R22 and R28 on both the schematic should not have any impact on the voltage at the SWS pin, because the 1Mohm impedance is to ensure there is no voltage across the FET during the OFF state.
2. The FB pin internally has an 8Kohm and that external C10 cap is to provide a low-pass filter to eliminate ripple on FB current. If the layout is strong enough you might not need this cap. Page 15 of UCC28780 datasheet explains further the use of this cap.
Regards,
Sonal