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BQ24780S: Reason for Gate-Source and Gate-Drain capacitance for Q1 and Q2?

Part Number: BQ24780S
Other Parts Discussed in Thread: CSD17308Q3

The EVM Schematic recommends 1nF and 47nF capacitor at C12 and C13. Whereas the MOSFET, CSD17308Q3, Ciss = 1000pF and Coss= 150pF. What is the reason for C12 and C13?