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LMG3410R050: Paralleling LMG3410 devices

Lukas Brzyszkiewicz
Intellectual 335 points
Part Number: LMG3410R050

Hello,

is there possibility to parallel LMG3410 to increase maximum current?

We are investigating possibility to use LMG3410R050 in our 3-level 3-phase current inverter but we have two options

- pure GaN transistors so we can do versions up to 240Amps (of transistor current -> 6mOhms)

- use LMG3410R050 but without parallel operation we are limited to 50mOhms resistance per transistor

  • 0
    TI__Expert 3225 points
    Hello,

    The short answer to your question is yes. You are able to parallel LMG3410R050 FETs. However, due to the requirement for smaller stray inductance in the loop, we suggest that you layout two half bridges, and send them the same PWM signals. You can connect the two switching nodes of via a small inductor such as 1uH. The reason of having this inductor is to prevent unbalanced capacitive loss during hard switching. During the turn on transient, one FET may turn on slightly earlier. But that is okay. GaN FET should be able to handle this current for a short period. Therefore, we do not have concern on the device paralleling.

    Thanks and regards,
    Lixing