Hello,
My BQ34110 seems to be reaching EDV2 and EDV1 thresholds too quickly when it is discharging. We have already completed all 6 GPC Cycles and have received back the parameters from TI. We have updated the CEDV parameters in data flash and the EDV_CMP bit in CEDV Gauging Configuration register is set. This means that EDV2 and EDV1 should be calculated by the chip. However, the EDV2 and EDV1 flags are being set simultaneously around ~11.6 V (full charge voltage is 12 V, 2V/cell in a 6s cell pack). Also, without the FIXED_EDV0 bit set in the Gauging Config register, the calculated EDV threshold the chip reports is -127 mV, which is obviously wrong. (For reference the OCV CEDV parameter for 100% DoD is 1666mV/cell or 9.996 pack voltage.)
1. Could anyone tell me why the EDV thresholds are so far off what they should be? Would it have something to do with the CEDV profile? I've attached a zip file with our profiling logs as well as the GPC calculator parameters we were given.
2. What are the benefits to using the automatically calculated EDV thresholds as opposed to a fixed value?
3. We are having difficulty measuring remaining capacity, time to empty, and full charge capacity. Remaining capacity decreases smoothly as the battery discharges, but still reads about 3000 mAh (Our design capacity is 8000 mAh) when it should be nearing 0. Then when EDV0 voltage is hit, it will drop immediately from 3000 mAh to 0. This is obviously not very helpful for our client. FCC also doesn't update, even when the [VDQ] flag is set during the entire discharge. Would these problems be related to our EDV threshold problems?
Thanks in advance for your time and any help you can give.
Colin
