TPS40210: VBP in case of VDD=6～8V

Hirotaka Matsumoto

Part Number: TPS40210

Hi all

Would you mind if we ask TPS40210?

There is the description on the datasheet P13;
"If the voltage at the VDD pin is less than 8 V, the voltage on the BP pin will also be less and the gate drive voltage to the external FET is reduced from the nominal 8 V."

Our customer will use TPS40210 with VDD=6～8V.

How much is the VBP in case of VDD=6～8V?
And how much is the internal LDO's VDO(drop voltage)?

Kind regards,

Hirotaka Matsumoto

over 6 years ago

0 Garrett Roecker over 6 years ago

TI__Mastermind 21720 points

Hello Hirotaka,

The BP pin voltage will be lower than and the VDD voltage. I will need to check with the design team and check for the silicon data for this specification.

To help you select a MOSFET assume that the BP voltage will not go below 5V. If this is the case I suggest selecting a logic level MOSFET. This will allow for the the MOSFET to fully enhanced.

Please let me know if you have any questions.

Thanks,

Garrett

0 Hirotaka Matsumoto over 6 years ago in reply to Garrett Roecker

Guru 27585 points

Garrett san

Thank you for your reply.
We are waiting for your design team's reply.

Kind regards,

Hirotaka Matsumoto

0 Garrett Roecker over 6 years ago in reply to Hirotaka Matsumoto

TI__Mastermind 21720 points

Hi Hirotaka,

The resistance of the LDO when it is in bypass mode is about 65 Ohm. The worst case drop will be when the BP pin is sourcing around 15mA which leads to a voltage drop of around 975mV below the VDD pin voltage.

Please let me know if you have any questions.

Thanks,

Garrett

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TPS40210: VBP in case of VDD=6～8V