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UCC28780: UCC28780

Part Number: UCC28780
Other Parts Discussed in Thread: UCC24612

Following is a txt I sent to EPC app folks. Surely, this is something we need to get your review as well....

Seems to me it will work!...but what dya think.

But here we go: I am wondering if you can review an application in which we intend to use EPC2034( or its new incarnations), 200V device. Again,  it is for a low power low switching frequency application. Reason for using GaN here is purely to avoid adding nuisance abatement circuitry or purely to obtain higher efficiency in small vol circuit.

It involves UCC28780 Active Clamp Flyback controller. The D/s  has the option of using primary side GaN (LMG3410) but uses MOSFET for synchronous rectification using UCC24612 sync controller- appears only to be useful with MOSFET.

But we want to use EPC2034! In most regions, they are similar.

One clear problem is that it sends out  gate drive level at VDD pin voltage if it is less than 9.5V( or something similar)

So, one way to trick the chip to give safe 5V gate drive is to provide 5.2V or so at VDD because the chip works down to 4V or so. Or do not use VDD & hook up 5V LDO output at REG pin.

See attached.

What would be your thinking on this?EPC_SYNC_UCC28780.pptx

  • Hello Robin,

    I discussed this with the IC designer.  The UCC24612 was designed to work with FETs and we believe GAN has a maximum negative VDS rating of 6V.  So this SR driver will not work.  At the present time we don't have a solution for a SR driver for GaN.

    Regards,

    Mike

  • Thanks Mike. Your point is well taken.
    What we derive from datasheet of 24612 is that in truth VDD pin can be left unused and we use an external LDO to get well-regulated 5V and connect that to REG pin to make 24612 function exactly as it should. Now, this allows 24612 to operate with GaN. That is all I am saying.
    I have an EVM, I can find out shortly.
    thnx.
    robin
  • Mike: oops, I misread your text. Let me read about negative Vds rating of GaN vs MOSFET. If MOSFET Vds is negative, the body diode clamps it to diode forward bias.
    In summary, GaN will have higher Vds negative - causing more loss & furthermore, 24612 does not cover this range of negative Vds.
    Got it for the low side use of the SR.
    How about having the switch on the top side instead of the low side as shown in most of the application notes. Using on the top side has some advantages as well as mentioned in the applications.
    How will that work?

    robin
  • Hello Robin,

    It might work on the high side as long as the output does not go above 6V. This is something I would not guarantee, but you can try it an evaluate it.

    Regards,

    Mike