Hi,
We use BQ25713RSNR to charge a 2-cell battery.
Situation and Phenomenon:
Boost mode,VBUS 5V,VBAT 7.4V
We measure the boost-mode MOSFET Gate drive signal.
CH3: Highside Vgs(Q209)
CH1: Lowside Vgs
Vgs(th)=1V (Min.)
Low side MOSFET rise over Vgs(th) before highside fall bellow Vgs(th);
High side fall slowly, and there is a step when falling down.There is risk that the Vin may be shorted to Ground.
Question:
Please help refer to the attached schematic and test result and check if they are OK.
BQ25713_MOSFET Switching Dead time.docx
Thanks