This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

UCC21520: Gate pulse issue on higher side mosfet of full bridge converter

Part Number: UCC21520

Hello everyone, 
I am working on half bridge circuit with input voltage range from 100-800 v and circuit topology is shown below. When I drive the mosfet using gate driver ucc21520 the higher side and lower side gate pulses are good and clean without any noise when I don't apply any input voltage on drain source of both higher and lower side mosfet of half bridge.

But the moment I apply input voltage (100-300v) on the mosfet at power side ( drain to source) the gate pulse on the higher side is offset is getting added up during gate pulse off period but same nature I am not able to see on lower mosfet. Initally I thought of Miller effect but it is only on higher side in lower side gate pulses are clear.

Below I am attaching photos of gate pulses on higher side and lower side. The gate pulse in which there is offset is higher side mosfet and the gate pulse in which pulses are clear without offset are lower side pulses. These nature I am able to see only when I provide drain to source input voltage.

And these offset is increasing with increasing input voltage. Please can I know what is the reason behind this. Waiting for the reply

No photo description available.

No photo description available.

No photo description available.

  • Hi Vinaykumar ,

    I work on the applications team in the high power drivers group and can help you with your question. Thanks for providing the schematic and scope shots, that helps a lot.

    It looks like this could be a probing issue. It appears that a high voltage differential probe is being used to probe the high side gate. High voltage differential probes usually have a limited common mode rejection ratio (CMRR), which allows some of the higher frequency switch node voltage to couple in. This will settle out more slowly, but can lead to some of the offset you see in your captures. Even if you’re using the same probe for measuring the low side gate, it doesn’t have to deal with the rejecting the switch node voltage and will look cleaner.

    If this doesn’t help, can you answer the following questions?

    Is the capacitor from gate to source populated? What value? This capacitor just adds extra load to the gate driver and shouldn’t be needed in most systems.

    What does S1-GND look like?

    How is low side gate probed?

    How is high side gate probed? Probe part number?

    FET part numbers?

    Is there any load on S1?

    Values of all external components (Cboot, Rg, Rgs, Cgs, Rboot)?

    If this helped solve your issue, could you please press the green button? If not, please feel free to provide more information.

    Thanks and best regards,

    John