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BQ76200: FET orientation...common sources?

Part Number: BQ76200
Other Parts Discussed in Thread: CSD19536

Hello again;

Sanity check - client's current FET disconnect board has the N MOSFET's oriented with common sources. I need confirmation that I can control them with the 76200. I've Spiced a simple circuit (attached) and it appears to function as desired, by swapping the CHG and DSG signals. Am I missing something obvious, and/or do you not recommend this use case?

Note that the FET used in the sim's was used because it has very large Qg. My client's application will use 16 AUIRF7759 (8:2), 330nQ, 75V.  I'll be testing the 76200 with a mach'd-up disconnect board soon, and am hoping it can turn on these FET's. They need ultra-low Rds because they will be switching up to 400A, and the board will be in an enclosed, sealed jar, with very high TempCo to the outside. This FET family (DirectFET), appears to have the lowest theta ja I can find.   Any alternatives from TI will be appreciated.

6888.Common Sources FET test.docx

  • Hello Jeffrey

    Thank you for your question.
    We are off for US holiday this Monday and will answer it when we're back at the office.

    Jessica Li
  • Hi Jeffrey,
    In general the bq76200 does not work with a common source configuration with the discharge FET closest to the battery. CHG is driven from the BAT pin voltage when off to BAT + VDDCP when on. The DSG pin is driven from the PACK pin level when off to BAT + VDDCP when on. At higher battery voltages the CHG pin would pull the gate of the charge FET above its abs max. For example in your simulation when V(chrg) is the only high signal the FET gate voltage would be 24V while the source could be 0V which will damage a conventional FET.
    While you may find situations where this configuration would work we would not typically recommend it.
  • Thanks WM5295...I missed that. But since the application is 12V, it looks as if I can test with the client's existing FET board.

    Another issue: As I explained in a previous post, the FETs are 8:2  AUIRF7759 with max Qg of 330nQ x 8, or roughly 260nF @ Vgs = 10V.  After reading slua794, I'm betting that the 76200 will likely be unable to switch these FETs on. However, using 2 76200's in parallel might do the trick.   Is there any reason why the 76200  could/should not be paralleled?

    Thanks.

  • Hi Jeffrey,
    Ciss is the typical simple parameter used for calculating the CVDDCP for the BQ76200, but as you indicate it is Qg which has more effect on switching. Since the AUIRF part has higher Ciss and Qg than the CSD19536 used in the apnote, it certainly may be more difficult to switch many FETs. While you can scale up the CVDDCP, the internal resistances remain fixed and the external resistances will have a practical limit.
    The BQ76200 was not designed to be paralleled. Different parts will have independent delays and UVLO thresholds. While the delays are short the parts could end up switching at different times with with essentially 1 part performing the switching or conflicting with the other device and potentially causing UVLO or load shifting between parts. Some FETs can trade load when paralleled and the small individual gate resistors are a common technique to avoid that, but I don't know of a an approach for paralleling BQ76200's.
  • Thanks WM5295. Looks like I'll have to suggest an alternative mosfet.
  • Hi Jeffrey,
    Check the existing FETs, the data sheet numbers don't always equate to a certain behavior. I'm certain it is a good FET, but if the 2 don't work well together something will need optimized.
  • Ok thanks.  Regarding the parallel 76200's, after thinking, I realized that I can simply use two -  one for half of the FETs and another for the other half. Though their timing may be skewed slightly, a few uS difference shouldn't matter (hopefully)