We use the BQ34110 in an application using 3xNiMH cells and are evaluating the EOS determination function. We use the host triggered mode with LSM = 1. A voltage divider is used in the application and the data flash Voltage Divider register is configured (0x15A9). Using the Voltage() and Current() functions correspond to correct voltage and current. The learning load is 39 Ohm. Activating the LEN pin and using Current() gives reasonable results.
However, when performing a EOS determination to get a RCELL reading the results are very strange and far from expected. We get a RCELL of 1949 mOhm and the Learning Start/End Voltages as reported by EOSSTATUS1 are in the order of 18000 mV.
Could there be some configuration missing that could explain this? Expected RCELL is ~100 mOhm and voltages should be in the 3800 mV range.
All also wonder where I can find the the spreadsheet that is supposed to be used for calculation the Rcell High & Low Temperature Coefficients based on measurements. For now the coefficients default to 0.
Best regards,