Im searching GaN device for the SMPS products.
I would like to know how does TI countermeasure the current collapse problem on GaN device.
If possible please show the reliability data.
Thank you.
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Im searching GaN device for the SMPS products.
I would like to know how does TI countermeasure the current collapse problem on GaN device.
If possible please show the reliability data.
Thank you.
Hello,
The current collapse is an issue due to traps and is very related to the process. We can't disclose any confidential material here but you may want to read some of the articles we have written in this space such as TI's white paper slyy070 or "Application reliability validation of GaN power devices" published in IEEE.
Regards,
Serkan
Hello Serkan.
Thank you for reply me.
I understand TI evaluate GaN device by many kinds of special tests.
But I need to estimate the GaN device can be adopted for our products.
There are some confidential matters that how to countermeasure current collapse I know.
Some maker use the second drain pad (P-GaN) to reduce the current collapse effect.
So I just want to know what does TI do for it, fine tuning GaN epitaxial growing or another TI's special method?
And I would like to have a reliability data for long term under high voltage switching operation at least.
Thank you for cooperate me.
Best Regards,
TAKASHI
Takashi-san,
I sent you a friendship request and we can follow up with you directly.
Thanks,
Masoud
Hello Mr.Masoud.
Thank you for respond to my issue.
I'm now studying about GaN device for our products.
So I need a information how does TI solve this current collapse problem on GaN device.
Not in detail ok.
And evaluation data also I need.
Very Best.
TAKASHI
Takashi-san,
No additional data beyond our data sheet is available at the moment. Please kindly refer to my previous response.
Thank you.