1. if UCC5350SB could be used to drive high side SiC MOSFET, as below Q12, Q14 ?
2. below is my application, if have any problems?
3. if have design reference for my design?
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Hi Jones,
Thanks for your interest in our driver, my name is Mamadou Diallo from the High Power Drivers applications team.
UCC5350SB can be used to drive a high-side SiC FET as shown in Figure 4 on the attached app note.
http://www.ti.com/lit/an/slua669a/slua669a.pdf
You would require a small transformer based isolated bias to maintain to boot capacitor voltage above the UVLO threshold enabling higher duty cycle operation if necessary.
Having said that, your link didn't attach therefore I could not access details of your application.
If I may, are you interested in this driver in part for the isolation? Or does your application require an isolated gate driver?
If you provide more details of your application, I can maybe suggest the appropriate driver that will meet your application's needs.
Please let us know if you have additional questions.
Regards,
-Mamadou
Hi, Jones,
Did you get your questions answered? If not, let us know, and we can help you.