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LMG1205: Need to drive 6V GaN FET gate

Brian Machesney1
Prodigy 80 points
Part Number: LMG1205
Other Parts Discussed in Thread: LM5113-Q1, LM5113

The datasheet for the LMG1205 says that the gate drive output voltage is internally clamped at 5V to prevent overvoltage. The LM5113-Q1 clamps the drive at 5.2V. I need 6V drive together with the many other important features of the LMG1205:

  • Independent HI and LO control inputs
  • ~10ns minimum input pulse width
  • <35ns propagation delay
  • No dead time

Does TI have a part with 6V drive and all of these characteristics?

Thanks for your assistance.

  • 0
    TI__Expert 3355 points

    Hi Brian,

    Thank you for your question. I work on the applications team in the high power drivers group.

    Can you tell us more about the need for 6V drive from LMG1205? 6V is usually determined to be too close to eGaN gate-to-source abs. max, especially when attempting to use it at such narrow pulse widths, which is why we selected 5V as the ideal clamp voltage.

    What FET are you trying to drive? Usually, if you need lower Rdson, you would need to choose a different FET, instead of increasing the gate drive voltage past 5V. 

    Thanks and best regards,

    John

  • 0 in reply to John Geiger
    TI__Genius 12990 points

    HI Brian,

    Thanks for reaching out I also work with John and think that LMG1205 will work for your application if using a eGaN FET. Going from 5V to 6V drive is not a good enough trade off to reduce the Rdson only a few mohm. LMG1205 has everything LM5113 has but also has all the upgrades. Let me know if you have any questions using LMG1205.

    Thanks,